Charge carrier localization in InAs self-organized quantum dots

Tunneling carrier escape from InAs self-assembled quantum dots

Self-aligned charge read-out for InAs nanowire quantum dots.

A highly sensitive charge detector is realized for a quantum dot in an InAs nanowire. We have developed a self-aligned etching process to fabricate in a single step a quantum point contact in a two-dimensional electron gas and a quantum dot in an InAs nanowire. The quantum dot is strongly coupled to the underlying point contact that is used as a charge detector. The addition of one electron to ...

Carrier relaxation dynamics in InAs/InP quantum dots

The electronic properties of InAs/InP(113)B double-cap quantum dots (QDs) emitting around 1.55 μm are investigated. The carrier dynamics in QDs is studied by non-resonant timeresolved photoluminescence (tr-PL) experiments. This analysis reveals the QD electronic structure and the transient filling of the confined QD levels. Under low excitation densities, the spontaneous exciton lifetime is est...

Modelling of self-organized InAs quantum dots embedded in an AlGaAs/GaAs heterostructure

Abstract We present results from a detailed simulation of InAs quantum dots embedded in an AlGaAs/GaAs heterostructure with a self-consistent three-dimensional solver of the Poisson–Schrödinger equation based on density functional theory and local density approximation. Single-electron effects in the structure are evaluated by computing the electrochemical potential by means of Slater’s transit...

Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots